Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PPM6N12V10
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| Gate Charge(Qg) | 29nC@4.5V |
|---|---|
| Drain to Source Voltage | 12V |
| Output Capacitance(Coss) | 735pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 655pF |
| RDS(on) | 80mΩ@1.8V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.405nF |
| Type | - |
12V 10A 2.4W Surface Mount DFN2x2-6L