Shanghai Prisemi Elec PPM523T201E0

Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PPM523T201E0

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Specifications

Gate Charge(Qg)1.4nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)800mA
Output Capacitance(Coss)9pF
Gate Threshold Voltage (Vgs(th))1.1V
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)450mΩ@4.5V;620mΩ@2.5V;860mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)110pF

Technical details

P-Channel Surface Mount SOT-523

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