Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PNMT6N1B
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| Gate Charge(Qg) | 500pC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 10pF |
| Current - Continuous Drain(Id) | 100mA |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 150mW |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 9Ω@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 40pF |
| Type | - |
N-Channel 30V 0.1A 0.15W Surface Mount DFN-6L(2.1x2.1)