Shanghai Prisemi Elec PNMT6N1-LB

Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PNMT6N1-LB

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage40V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)180mA
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation150mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)4Ω@4.5V
Number-
Input Capacitance(Ciss)40pF
Type-

Technical details

40V 180mA 1.5V 150mW 4Ω@4.5V UDFN-6(2x2) Single FETs, MOSFETs RoHS

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