Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PNMT6N1
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 180mA |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 150mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
40V 180mA 150mW 1 N-channel UDFN-6(2x2) Single FETs, MOSFETs RoHS