Shanghai Prisemi Elec PNMT60V3

Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PNMT60V3

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)12nC@10V
Current - Continuous Drain(Id)3A
Output Capacitance(Coss)40pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.04W
RDS(on)82mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)12pF
Number1 N-channel
Input Capacitance(Ciss)350pF

Technical details

N-Channel Surface Mount SOT-23

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