Shanghai Prisemi Elec PNMT60V02E

Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PNMT60V02E

No reviews yet — be the first to review Shanghai Prisemi Elec PNMT60V02E.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)230pC@4.5V
Output Capacitance(Coss)20pF
Current - Continuous Drain(Id)180mA
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation150mW
RDS(on)7.5Ω@10V
Reverse Transfer Capacitance (Crss@Vds)5pF
Number1 N-channel
Input Capacitance(Ciss)40pF

Technical details

60V 0.18A 150mW Surface Mount SOT-23

Related FETs & Power MOSFETs