Shanghai Prisemi Elec PNMT30V6A

Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PNMT30V6A

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)6.4nC@4.5V
Current - Continuous Drain(Id)5.8A
Output Capacitance(Coss)46pF
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)25mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)582pF

Technical details

N-Channel Surface Mount SOT-23

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