Shanghai Prisemi Elec PNM523T30V01

Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PNM523T30V01

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Specifications

Gate Charge(Qg)500pC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)10pF
Current - Continuous Drain(Id)100mA
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation150mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)40pF

Technical details

30V 100mA 1.5V 150mW 3Ω@10V 1 N-channel SOT-523 Single FETs, MOSFETs RoHS

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