Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PNM3FD20V1E
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 1nC@4.5V |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 300mW |
| RDS(on) | 450mΩ@1.8V |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 48pF |
| Type | N-Channel |
N-Channel 20V 1A 300mW Surface Mount DFN1006-3L