Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PNM3FD201E0
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 13pF |
| Current - Continuous Drain(Id) | 300mA |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | 140mW |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 400mΩ@4V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 30pF |
20V 300mA 1.1V 140mW 400mΩ@4V 1 N-channel DFN1006-3L Single FETs, MOSFETs RoHS