Shanghai Prisemi Elec PDTC143ZE

Shanghai Prisemi Elec · Transistors (BJTs) · MPN PDTC143ZE

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO-
DC Current Gain80
Operating Temperature-
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV
Input Resistor4.7kΩ
typeNPN
Number1 NPN (Pre-Biased)
Resistor Ratio10
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)1.3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 100mA 150mW Surface Mount SOT-523

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