Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PDNM6ET20V05
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 1.64nC@4.5V |
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 28pF |
| Current - Continuous Drain(Id) | 500mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| Pd - Power Dissipation | 300mW |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 290mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 50pF |
N-Channel Array 20V 0.5A Surface Mount SOT-563