SCILICON SLC800MD10SLT2(-S)

SCILICON · FETs & Power MOSFETs · MPN SLC800MD10SLT2(-S)

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Specifications

Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)410nC@10V
Output Capacitance(Coss)15nF
Current - Continuous Drain(Id)650A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation1.2kW
Reverse Transfer Capacitance (Crss@Vds)400pF
RDS(on)0.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)26nF

Technical details

N-Channel 100V 650A 1200W SMD,59x35mm

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