SCILICON · FETs & Power MOSFETs · MPN SLC650MM10SLT2
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 430nC@40V |
| Output Capacitance(Coss) | 15.8nF |
| Current - Continuous Drain(Id) | 650A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 650W |
| RDS(on) | 0.8mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 27nF |
100V 650A 3.5V 650W 0.8mΩ@10V 1 N-channel N-Channel Through Hole Single FETs, MOSFETs RoHS