SCILICON · FETs & Power MOSFETs · MPN SFW097N200C3
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| Gate Charge(Qg) | 195nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 135A |
| Output Capacitance(Coss) | 425pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.9V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 8.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.338nF |
| Type | N-Channel |
200V 135A 2.9V 375W 8.4mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS