SCILICON · FETs & Power MOSFETs · MPN SFW096N200I3
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| Gate Charge(Qg) | 69nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 407pF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 9.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.45nF |
N-Channel 200V 100A 250W Through Hole TO-247