SCILICON · FETs & Power MOSFETs · MPN SFW095N200C3
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| Gate Charge(Qg) | 125nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 135A |
| Output Capacitance(Coss) | 81pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 337W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 7.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.805nF |
| Type | N-Channel |
200V 135A 3V 337W 7.9mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS