SCILICON · FETs & Power MOSFETs · MPN SFW025N100C3
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| Gate Charge(Qg) | 147nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 190A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 416W |
| RDS(on) | 2.8mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
N-Channel 100V 190A 416W Through Hole TO-247