SCILICON SFW024N100C3

SCILICON · FETs & Power MOSFETs · MPN SFW024N100C3

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Specifications

Configuration-
Gate Charge(Qg)165nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.252nF
Current - Continuous Drain(Id)272A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation223W
Reverse Transfer Capacitance (Crss@Vds)324pF
RDS(on)2.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)15.098nF

Technical details

N-Channel 100V 272A 223W Through Hole TO-247

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