SCILICON SFT025N100C3

SCILICON · FETs & Power MOSFETs · MPN SFT025N100C3

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Specifications

Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)170nC@10V
Output Capacitance(Coss)2.089nF
Current - Continuous Drain(Id)260A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation275W
Reverse Transfer Capacitance (Crss@Vds)154pF
RDS(on)2.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.118nF

Technical details

N-Channel 100V 260A 275W Surface Mount TOLL

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