SCILICON SFT018N100C3

SCILICON · FETs & Power MOSFETs · MPN SFT018N100C3

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Specifications

Gate Charge(Qg)162nC@10V
Configuration-
Drain to Source Voltage100V
Output Capacitance(Coss)1.256nF
Current - Continuous Drain(Id)320A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation312W
Reverse Transfer Capacitance (Crss@Vds)185pF
RDS(on)1.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)14.495nF

Technical details

N-Channel 100V 320A 312W Surface Mount TOLL

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