SCILICON SFT016N80C3

SCILICON · FETs & Power MOSFETs · MPN SFT016N80C3

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Specifications

Configuration-
Drain to Source Voltage80V
Gate Charge(Qg)208nC@10V
Output Capacitance(Coss)2.142nF
Current - Continuous Drain(Id)360A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation312.5W
RDS(on)1.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)58pF
Number1 N-channel
Input Capacitance(Ciss)14.256nF

Technical details

N-Channel 80V 360A 312.5W Surface Mount TOLL

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