SCILICON SFT015N110C3

SCILICON · FETs & Power MOSFETs · MPN SFT015N110C3

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Specifications

Drain to Source Voltage110V
Configuration-
Gate Charge(Qg)168nC@10V
Output Capacitance(Coss)4.768nF
Current - Continuous Drain(Id)372A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation329W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)1.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)10.208nF

Technical details

N-Channel 110V 372A 329W Surface Mount TOLL

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