SCILICON · FETs & Power MOSFETs · MPN SFP640BC1
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| Gate Charge(Qg) | 43nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 172pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Pd - Power Dissipation | 134.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 130mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.136nF |
200V 20A 134.4W 130mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS