SCILICON · FETs & Power MOSFETs · MPN SFP098N200I3
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| Gate Charge(Qg) | 69nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 450pF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| RDS(on) | 9.8mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.35nF |
200V 100A 4V 250W 9.8mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS