SCILICON · FETs & Power MOSFETs · MPN SFP066N68BI2
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| Gate Charge(Qg) | 69nC@10V |
|---|---|
| Drain to Source Voltage | 68V |
| Current - Continuous Drain(Id) | 100A |
| Output Capacitance(Coss) | 318pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 115W |
| Reverse Transfer Capacitance (Crss@Vds) | 226pF |
| RDS(on) | 5.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.426nF |
68V 100A 3V 115W 5.5mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS