SCILICON · FETs & Power MOSFETs · MPN SFG026N150I3
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| Drain to Source Voltage | 150V |
|---|---|
| Configuration | - |
| Gate Charge(Qg) | 180nC@10V |
| Output Capacitance(Coss) | 1.18nF |
| Current - Continuous Drain(Id) | 193A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.6V |
| Pd - Power Dissipation | 446W |
| RDS(on) | 2.7mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13.9nF |
N-Channel 150V 193A 446W Through Hole TO-247PLUS-4L