SCILICON · FETs & Power MOSFETs · MPN SFG019N100C3
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| Gate Charge(Qg) | 268nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 420A |
| Output Capacitance(Coss) | 2.8nF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 480W |
| RDS(on) | 1.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 22nF |
100V 420A 4V 480W 1.5mΩ@10V 1 N-channel TO-247PLUS-4L Single FETs, MOSFETs RoHS