SCILICON SFE055N100C3

SCILICON · FETs & Power MOSFETs · MPN SFE055N100C3

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Specifications

Gate Charge(Qg)58nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)95A
Output Capacitance(Coss)457pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation89W
RDS(on)4.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)26pF
Number1 N-channel
Input Capacitance(Ciss)4.015nF

Technical details

100V 95A 3V 89W 4.6mΩ@10V 1 N-channel DFN-8(5x6) Single FETs, MOSFETs RoHS

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