SCILICON SFD347N100C2

SCILICON · FETs & Power MOSFETs · MPN SFD347N100C2

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)96pF
Current - Continuous Drain(Id)36A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)30mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.512nF
TypeN-Channel

Technical details

100V 36A 1.7V 78W 30mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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