SCILICON · FETs & Power MOSFETs · MPN SFD200N60BC3
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 36nC@10V |
| Current - Continuous Drain(Id) | 50A |
| Output Capacitance(Coss) | 325pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 78W |
| RDS(on) | 14mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.239nF |
60V 50A 1.9V 78W 14mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS