SCILICON · FETs & Power MOSFETs · MPN SFB60N100
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 80A |
| Output Capacitance(Coss) | 96pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 78W |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 30mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.512nF |
100V 80A 1.7V 78W 30mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS