SCILICON · FETs & Power MOSFETs · MPN SFB107N200C3
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| Gate Charge(Qg) | 58nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 132A |
| Output Capacitance(Coss) | 425pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 375W |
| RDS(on) | 9.1mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.972nF |
200V 132A 3V 375W 9.1mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS