SCILICON SFB058N80C3

SCILICON · FETs & Power MOSFETs · MPN SFB058N80C3

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)66nC@10V
Current - Continuous Drain(Id)120A
Output Capacitance(Coss)526pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation145W
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)4.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.868nF

Technical details

80V 120A 3V 145W 4.9mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS

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