SCILICON · FETs & Power MOSFETs · MPN SFB053N100C3
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| Gate Charge(Qg) | 68nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 120A |
| Output Capacitance(Coss) | 658pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 160W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 4.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.825nF |
100V 120A 3V 160W 4.8mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS