SCILICON · FETs & Power MOSFETs · MPN SFB044N100C3
No reviews yet — be the first to review SCILICON SFB044N100C3.
| Gate Charge(Qg) | 117nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 853pF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 192W |
| RDS(on) | 3.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.192nF |
100V 120A 3V 192W 3.5mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS