SCILICON · FETs & Power MOSFETs · MPN SFB039N100C3
No reviews yet — be the first to review SCILICON SFB039N100C3.
| Gate Charge(Qg) | 107nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 856pF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 3.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.51nF |
100V 120A 3V 208W 3.4mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS