SCILICON · FETs & Power MOSFETs · MPN SFB024N100C3
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| Gate Charge(Qg) | 245nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.225nF |
| Current - Continuous Drain(Id) | 210A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 231W |
| Reverse Transfer Capacitance (Crss@Vds) | 182pF |
| RDS(on) | 2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14.48nF |
100V 210A 3V 231W 2mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS