SCILICON · FETs & Power MOSFETs · MPN SFB021N40C2
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| Gate Charge(Qg) | 150nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 190A |
| Output Capacitance(Coss) | 752pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 650pF |
| RDS(on) | 1.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.5nF |
40V 190A 1.7V 208W 1.6mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS