Samwin · FETs & Power MOSFETs · MPN SWY4N60D
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| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 23.5W |
| RDS(on) | 1.9Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 8.4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 651pF |
600V 4A 23.5W Through Hole TO-220FT