Samwin SWY12N65D

Samwin · FETs & Power MOSFETs · MPN SWY12N65D

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Specifications

Gate Charge(Qg)41nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation34W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)660mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.74nF

Technical details

650V 12A 34W Through Hole TO-220FT

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