Samwin · FETs & Power MOSFETs · MPN SWY10N65D
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| Gate Charge(Qg) | 35nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 181.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF |
| RDS(on) | 900mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.45nF |
650V 10A 181.2W Through Hole TO-220FT