Samwin · FETs & Power MOSFETs · MPN SWUI4N65D
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| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 145W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 2.6Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 758pF |
650V 4A 145W Through Hole TO-251U