Samwin · FETs & Power MOSFETs · MPN SWT18N50D
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| Gate Charge(Qg) | 88nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 312.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF |
| RDS(on) | 240mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.68nF |
500V 18A 312.5W Through Hole TO-247