Samwin · FETs & Power MOSFETs · MPN SWQI6N70DA
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| Gate Charge(Qg) | 26nC@10V |
|---|---|
| Drain to Source Voltage | 700V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 138.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 1.7Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.04nF |
700V 6A 138.8W Through Hole TO-251Q