Samwin · FETs & Power MOSFETs · MPN SWP640D
No reviews yet — be the first to review Samwin SWP640D.
| Gate Charge(Qg) | 38nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 110.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF |
| RDS(on) | 150mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
200V 18A 110.6W Through Hole TO-220