Samwin SWP160R12VT

Samwin · FETs & Power MOSFETs · MPN SWP160R12VT

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Specifications

Gate Charge(Qg)64nC@10V
Drain to Source Voltage120V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation176W
RDS(on)16.4mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)136pF
Number1 N-channel
Input Capacitance(Ciss)2.84nF

Technical details

120V 50A 176W Through Hole TO-220

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