Samwin SWP085R68E7T

Samwin · FETs & Power MOSFETs · MPN SWP085R68E7T

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Specifications

Gate Charge(Qg)47nC@10V
Drain to Source Voltage68V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation125W
RDS(on)9.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)125pF
Number1 N-channel
Input Capacitance(Ciss)2.053nF

Technical details

68V 75A 125W Through Hole TO-220

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