Samwin SWP076R68E7T

Samwin · FETs & Power MOSFETs · MPN SWP076R68E7T

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Specifications

Gate Charge(Qg)70nC@10V
Drain to Source Voltage68V
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation138.9W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)7.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.467nF

Technical details

68V 85A 138.9W Through Hole TO-220

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